specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein stipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer ' s products or equipment. to verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer ' s products or equipment. any and all sanyo semiconductor co.,ltd. products described or contained herein are, with regard to "standard application", intended for the use as general electronics equipment. the products mentioned herein shall not be intended for use for any "special application" (medical equipment whose purpose is to sustain life, aerospace instrument, nuclear control device, burning appliances, transportation machine, traffic signal system, safety equipment etc.) that shall require extremely high level of reliability and can directly threaten human lives in case of failure or malfunction of the product or may cause harm to human bodies, nor shall they grant any guarantee thereof. if you should intend to use our products for new introduction or other application different from current conditions on the usage of automotive device, communication device, office equipment, industrial equipment etc. , please consult with us about usage conditi on (temperature, operation time etc.) prior to the intended use. if there is no consultation or inquiry before the intended use, our customer shall be solely responsible for the use. 20812 sy 20120127-s00010//d2006 sy im b8-5373 no.a0299-1/6 LB11988H overview LB11988H is a motor driver ic optimal for driving the dc fan motors. functions ? three-phase full-wave current linear drive ? built-in current limiter circuit ? built-in saturation prevention circuits in both the upper and lower sides of the output stage ? forward/backward rotation direction setting circuit built in ? fg amplifier ? thermal shutdown circuit specifications absolute maximum ratings at ta = 25 c parameter symbol conditions ratings unit maximum supply voltage v cc max 24 v v s max 24 v maximum output current i o max 1.3 a allowable power dissipation pd max independent ic 0.8 w operating temperature topr -30 to +85 c storage temperature tstg -55 to +150 c caution 1) absolute maximum ratings represent the va lue which cannot be exceeded for any length of time. caution 2) even when the device is used within the range of absolu te maximum ratings, as a result of continuous usage under hig h temperature, high current, high voltage, or drastic temperature change, the reliability of the ic may be degraded. please contact us for the further details. allowable operating ratings at ta = 25 c parameter symbol conditions ratings unit supply voltage v s 5 to 22 v v cc 7 to 22 v hall input amplitude v hall between hall inputs 30 to 80 mvo-p monolithic digital ic fan motor driver orderin g numbe r : ena0299b
LB11988H no.a0299-2/6 electrical characteristics at ta = 25 c, v cc = 12v, v s = 12v parameter symbol conditions ratings unit min typ max v cc current drain i cc r l = 560 (y) 15 24 ma output output saturation voltage v o sat1 i o = 500ma, rf = 0.5 , sink + source (saturation prevention function included) 2.1 2.6 v v o sat2 i o = 1.0a, rf = 0.5 , sink + source (saturation prevention function included) 2.6 3.5 v output leakage current i o leak 1.0 ma hall amplifier input offset voltage v off (hall) -6 +6 mv input bias current v b (hall) v in , w in 1 3 a common-mode input voltage v cm (hall) 3 v cc -3 v fr threshold voltage v frth 4 8 v input bias current ib (fr) -5 a current limiter lim pin current limit level i lim rf = 0.5 , with the hall input logic states fixed (u, v, w = high, high, low) 1 a saturation saturation prevention circuit lower side voltage setting v o sat (det) rl = 560 (y), rf = 0.5 , the voltage between each output and the corresponding rf. 0.28 v fg amplifier upper side output saturation voltage vsatu (sh) 11.8 v lower side output saturation voltage vsatd (sh) 0.3 v hysteresis vhys 23 mv tsd operating temperature t-tsd design target value* 170 c note * : items shown to be design target val ues in the conditions column are not measured. package dimensions unit : mm (typ) 3234b sanyo : hsop28hc(375mil) 15.2 (6.2) 0.25 0.3 0.1 (2.25) (0.8) 0.8 2.0 10.5 7.9 (4.9) 0.65 2.7 2.45 max heat spreader 1 14 15 28
LB11988H no.a0299-3/6 pin assignment truth table and control functions source sink hall input fr note : the ?h? state for fr is defined as a voltage of 8v or higher, and the ?l? state for fr is defined as a voltage of 4v or lower. (when v cc = 12v.) note : for the hall inputs, the input high state is defined to be the state where the (+) input is higher than the corresponding (-) input by 0.01v or higher, and the input low state is defined to be the state where the (+) input is lower than the corresponding (-) input by 0.01v or higher. note : since this drive technique is a 180 current application scheme, the phases other than the sink and the source phases will not turn off. u v w 1 v w h h l h w v l 2 u w h l l h w u l 3 u v h l h h v u l 4 w v l l h h v w l 5 w u l h h h u w l 6 v u l h l h u v l ambient temperature, ta - c -30 -10 10 30 50 70 90 0 0.2 0.6 0.4 0.8 1.0 pd max - ta allowable power dissipation, pd max - w 0.42 0.8 independent ic v out w out 1 18 u out nc 2 17 nc fgout 3 16 rf fr 4 15 vs gnd 5 14 v cc fc 6 13 w in - u in + 7 12 w in + u in - 8 11 v in - v in + 9 10 LB11988H top view 21 20 19 25 24 23 22 28 27 26 nc nc nc nc nc nc nc nc nc nc
LB11988H no.a0299-4/6 block diagram + - + - + - + - hall input synthesis block (linear matrix) synthesized output logarithmic compression block logarithmic conversion and differential distribution differential distribution current limiter feedback amplifier fg amplifier u out rf fc vs v out w out u in + u in - u in + u in - v cc v cc v cc fgout gnd reference voltage tsd bandgap 1.2v limref + - + - + - + + + - v in + v in - + - w in + w in - schmitt amplifier drive distribution circuit and lower side saturation prevention control upper side saturation prevention control forward/reverse switing fr v cc
LB11988H no.a0299-5/6 equivalent circuit pin name equivalent circuit u in + u in - v in + v in - w in + w in - 200 200 100 a input + input - u out v out w out rf v s 200 30k 150 a v cc rf output lower side oversaturation prevention circuit input block v s fr v cc fr 200 1/2 v cc 200 a fc 10k v cc fc fgout v cc v cc fgout
LB11988H ps no.a0299-6/6 pin functions pin no. pin name function 22 frame gnd ground for circuits other than the output transistors. note that the rf pin will be at the lowe st potential of the output transistors. 25 fgout this is the fg amplifier output pin. internally, it is a resistive load. (pull up) 23 fr forward/reverse switching pin 20 fc corrects the frequency characteristics of the saturati on prevention circuit loop and current limiter circuit. 17, 16 15, 12 11, 10 u in + , u in - v in + , v in - w in + , w in - u-phase hall input. logic high refers to the state where in + > in - . v-phase hall input. logic high refers to the state where in + > in - . w-phase hall input. logic high refers to the state where in + > in - . 8 v cc power supply provided to all ic internal circuits other than the output block. this voltage must be stabilized so that ripple and noise do not enter the ic. 7 v s output block power supply 6 rf used for output current detection. th e current limiter circuit operates using the resistor (rf) connected between this pin and ground. note that the lower side saturation prevention circuit oper ates according to the voltage that appears on this pin. since the over-saturation level is set by this voltage, the level of the lower side saturation prevention circuit may be degraded in the large current region if the value of rf is made extremely small. 2 1 28 u out v out w out u-phase hall output. v-phase hall output. (these pins include internal spark killer diodes.) w-phase hall output. this catalog provides information as of february, 2 012. specifications and information herein are subject to change without notice. sanyo semiconductor co.,ltd. assumes no responsib ility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all sanyo semiconductor co.,ltd. products described or contained herein. sanyo semiconductor co.,ltd. strives to supply high-quality high-reliab ility pr oducts, however, any and all semiconductor products fail or malfunction with some probab ility. it is possible that these pr obab ilistic failures or malfunction could give rise to accidents or events that could endanger human lives, trouble that could give rise to smoke or fire, or accidents that could cause dam age to other property. when designing equipment, adopt safety measures so that these kinds of accidents or events cannot occur. such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design, and structural design. upon using the technical information or products described herein, neither warranty nor license shall be granted with regard to intellectual property rights or any other rights of sanyo semiconductor co.,ltd. or any third party. sanyo semiconductor co.,ltd. shall not be liable for any claim or suits with regard to a third party's intellctual property rights which has resulted from the use of the technical information and products mentioned above. any and all information described or contained herein are subject to change without notice due to product/technology improvement, etc. when designing equip ment, refer to the "delivery specification" for the sanyo semiconductor co.,ltd. product that you intend to use. in the event that any or all sanyo semiconductor co.,ltd. products described or contained herein are controlled under any of applicable local export control laws and regulations, such products may require the export license from the authorities concerned in accordance with the above law. no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written consent of sanyo semiconductor co.,ltd.
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